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From microelectronics to spintronics and magnonics

From microelectronics to spintronics and magnonics

作     者:韩秀峰 万蔡华 吴昊 郭晨阳 唐萍 严政人 邢耀文 何文卿 于国强 Xiu-Feng Han;Cai-Hua Wan;Hao Wu;Chen-Yang Guo;Ping Tang;Zheng-Ren Yan;Yao-Wen Xing;Wen-Qing He;Guo-Qiang Yu

作者机构:Beijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesUniversity of Chinese Academy of SciencesBeijing 100190China 

出 版 物:《Chinese Physics B》 (中国物理B(英文版))

年 卷 期:2022年第31卷第11期

页      面:12-22页

核心收录:

学科分类:07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程(可授工学、理学学位)] 0812[工学-计算机科学与技术(可授工学、理学学位)] 0702[理学-物理学] 

基  金:Project supported by the National Key Research and Development Program of China(Grants No.2017YFA0206200) the National Natural Science Foundation of China(Grant Nos.51831012 and 12134107) the Beijing Natural Science Foundation(Grant No.Z201100004220006) 

主  题:magnon valve effect magnon junction effect magnon resonant tunneling effect magnon-transfer torque effect 

摘      要:In this review,the recent developments in microelectronics,spintronics,and magnonics have been summarized and ***,the history of the spintronics has been briefly ***,the recent development of magnonics such as magnon-mediated current drag effect(MCDE),magnon valve effect(MVE),magnon junction effect(MJE),magnon blocking effect(MBE),magnon-mediated nonlocal spin Hall magnetoresistance(MNSMR),magnon-transfer torque(MTT)effect,and magnon resonant tunneling(MRT)effect,magnon skin effect(MSE),etc.,existing in magnon junctions or magnon heterojunctions,have been summarized and their potential applications in memory and logic devices,etc.,are prospected,from which we can see a promising future for spintronics and magnonics beyond micro-electronics.

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