High-frequency enhanced response based on Sb_(2)Te_(3)topological insulators
High-frequency enhanced response based on Sb2Te3 topological insulators作者机构:College of Physics and Optoelectronic EngineeringHangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesHangzhou 310024China State Key Laboratory of Infrared PhysicsShanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Shanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai 201800China Department of Optoelectronic Science and EngineeringDonghua UniversityShanghai 201620China Terahertz Technology Innovation Research InstituteShanghai Key Laboratory of Modern Optical SystemUniversity of Shanghai for Science and TechnologyShanghai 200093China
出 版 物:《Photonics Research》 (光子学研究(英文版))
年 卷 期:2022年第10卷第10期
页 面:2302-2308页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学]
基 金:Shanghai Municipal Science and Technology Major Project(2019SHZDZX01) Science and Technology Commission of Shanghai Municipality(20JC1416000,20QA1410400,22JC1402900) Excellent Postdoctoral Research Projects of Zhejiang Province(ZJ2021019) Natural Science Foundation of Zhejiang Province(LQ20F050005,LR22F050004) National Natural Science Foundation of China(62222514,61521005,61875217,61875218,61875223,61991442,62005249,91850208) State Key Program for Basic Research of China(2018YFA0306200)
主 题:scattering insulator quantum
摘 要:Topological insulators represent a new quantum phase of matter with spin-polarized surface states that are protected from backscattering, exhibiting electronic responses to light, such as topological quantum phase transitions. However, the effects of high-frequency driving topological intrinsic systems have remained largely unexplored challenges experimentally for high-sensitivity terahertz detection. In this study, by integrating Sb2Te3 topological insulators with subwavelength metal antennas through micro-nano processing, a high-frequency terahertz detector with high sensitivity is proposed. The enhanced response originates from the asymmetric scattering of the surface electrons in the Sb_(2)Te_(3) flakes induced by the terahertz wave. The device displays room-temperature photodetection with a responsivity of 192 mA/W and equivalent noise power of less than 0.35 nW/Hz^(1/2) in the frequency range from 0.02 to 0.3 THz. These results pave the way for the exploitation of topological insulators for high-frequency operation in real-time imaging within long-wavelength optoelectronics.