Rapid,noncontact,sensitive,and semiquantitative characterization of buffered hydrogen-fluoridetreated silicon wafer surfaces by terahertz emission spectroscopy

作     者：Dongxun Yang Abdul Mannan Fumikazu Murakami Masayoshi Tonouchi Dongxun Yang;Abdul Mannan;Fumikazu Murakami;Masayoshi Tonouchi

作者机构：Institute of Laser EngineeringOsaka University 2-6 YamadaokaSuitaOsaka 565-0871Japan 

出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)

年 卷 期：2022年第11卷第12期

页      面：2982-2993页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 070302[理学-分析化学] 0703[理学-化学] 

基　　金：supported by JST the establishment of university fellowships towards the creation of science technology innovation Grant Number JPMJFS2125 

主　　题：terminated fluoride fluorine 

摘      要：Advances in modern semiconductor integrated circuits have always demanded faster and more sensitive analytical methods on a large-scale *** surface of wafers is fundamentally essential to start building circuits,and quantitative measures of the surface potential,defects,contamination,passivation quality,and uniformity are subject to *** present study provides a new approach to access those by means of terahertz(THz)emission *** femtosecond laser illumination,THz radiation,which is sensitive to the surface electric fields of the wafer,is ***,we systematically research the THz emission properties of silicon surfaces under different surface conditions,such as the initial surface with a native oxide layer,a fluorine-terminated surface,and a hydrogenterminated ***,a strong doping concentration dependence of the THz emission amplitude from the silicon surface has been revealed in different surface conditions,which implies a semiquantitative connection between the THz emission and the surface band bending with the surface ***-induced THz emission spectroscopy is a promising method for evaluating local surface properties on a wafer scale.