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Compact multilayer dual-band bandpass filter design using stepped impedance resonators

Compact multilayer dual-band bandpass filter design using stepped impedance resonators

作     者:Han Yunan Liang Peiyun Lin Yang Cheng Chunyue Yao Yuchen Jin Ming Dai Lin Han Yunan;Liang Peiyun;Lin Yang;Cheng Chunyue;Yao Yuchen;Jin Ming;Dai Lin

作者机构:College of Information Science and TechnologyBeijing University of Chemical TechnologyBeijing 100029China Beijing Instituteof Space Launch TechnologyBeijing 100076China Beijing Institute of Radio Metrology and MeasurementBeijing 100854China Liaohe Petroleum Exploration Bureau Communication CompanyPanjin 124010China 

出 版 物:《The Journal of China Universities of Posts and Telecommunications》 (中国邮电高校学报(英文版))

年 卷 期:2022年第29卷第5期

页      面:99-104页

核心收录:

学科分类:080902[工学-电路与系统] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 

基  金:supported by the Beijing Natural Science Foundation(8202036) 

主  题:5G RF front-end bandpass filter(BPF) stepped impedance resonator(SIR) strip line transmission zero(TZ) 

摘      要:Compact dual-band bandpass filter(BPF)for the 5 th generation mobile communication technology(5 G)radio frequency(RF)front-end applications was presented based on multilayer stepped impedance resonators(SIRs).The multilayer dual-band SIR BPF can achieve high selectivity and four transmission zeros(TZs)near the passband edges by the quarter-wavelength tri-section *** multilayer dual-band SIR BPF is fabricated on a 3-layer FR-4 substrate with a compact dimension of 5.5 mm×5.0 mm×1.2 *** measured two passbands of the multilayer dual-band SIR BPF are 3.3 GHz-3.5 GHz and 4.8 GHz-5.0 GHz with insertion loss(IL)less than 2 dB *** measured and simulated results suggest that it is a possible candidate for the application of 5 G RF front-end at sub-6 GHz frequency band.

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