Effect of Cumulative Nanosecond Laser Pulses on the Plasma Emission Intensity and Surface Morphology of Pt-and Ag-Ion Deposited Silicon
Effect of Cumulative Nanosecond Laser Pulses on the Plasma Emission Intensity and Surface Morphology of Pt-and Ag-Ion Deposited Silicon作者机构:Advanced Physics LaboratoryDepartment of PhysicsUniversity of Engineering and Technology
出 版 物:《Plasma Science and Technology》 (等离子体科学和技术(英文版))
年 卷 期:2012年第14卷第4期
页 面:333-337页
核心收录:
学科分类:080901[工学-物理电子学] 0809[工学-电子科学与技术(可授工学、理学学位)] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程(可授工学、理学学位)] 0803[工学-光学工程] 0702[理学-物理学]
主 题:ions deposited silicon laser irradiation plasma plume emission intensity,crater formation
摘 要:In this work, the laser induced plasma plume characteristics and surface morphology of Pt- and Ag-ion deposited silicon were studied. The deposited silicon was exposed to cumulative laser pulses. The plasma plume images produced by each laser shot were captured through a computer controlled image capturing system and analyzed with image-J software. The integrated optical emission intensity of both samples showed an increasing trend with increasing pulses. Agion deposited silicon showed higher optical emission intensity as compared to Pt-ion deposited silicon, suggesting that more damage occurred to the silicon by Ag ions, which was confirmed by SRIM/TRIM simulations. The surface morphologies of both samples were examined by optical microscope showing thermal, exfoliational and hydrodynamical sputtering processes along with the re-deposition of the material, debris and heat affected zones' formation. The crater of Ption deposited silicon was deeper but had less lateral damage than Agion deposited silicon. The novel results clearly indicated that the ion deposited silicon surface produced incubation centers, which led to more absorption of incident light resulting into a higher emission intensity from the plasma plume and deeper crater formation as compared to pure silicon. The approach can be effectively utilized in the laser induced breakdown spectroscopy technique, which endures poor limits of detection.