Isotropic Tuning of Electrochemical Etching forthe Nanometric Finishing of Metals

作     者：Rong Yi Zejin Zhan Hui Deng Rong Yi;Zejin Zhan;Hui Deng

作者机构：Department of Mechanical and Energy EngineeringSouthern University of Science and TechnologyNo.1088Xueyuan RoadShenzhen 518055GuangdongChina 

出 版 物：《Nanomanufacturing and Metrology》 (纳米制造与计量（英文）)

年 卷 期：2022年第5卷第3期

页      面：283-296页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：the National Natural Science Foundation of China(52035009,52005243) the Science and Technology Innovation Committee of Shenzhen Municipality(JCYJ20200109141003910,JCYJ20210324120402007,KQTD20170810110250357) 

主　　题：ACSM Metal finishing Isotropic etching polishing Electrochemical polishing 

摘      要：Isotropic etching polishing(IEP)based on the merging of isotropic etch pits has been proposed as a generic metal finishing *** this work,the tuning of the etching isotropy of various metals,which is the key to realizing the finishing effect of IEP,is studied by theoretical analysis and etching *** isotropic etching of various metals can be realized through mass transfer polarization by adjusting the electrochemical *** addition of sulfuric acid in the electrolyte is the most effective for tuning the isotropy of electrochemical *** can decrease the diffusion coefficient of metal ions,thereby increasing the resistance of mass transfer and transforming the electrochemical dissolution of metal into mass transfer *** this study,the atomic and close-to-atomic scale surface finishing of various metals and alloys has been successfully achieved through isotropic *** etching at a current of 1.5 A for 3 min,the surface Sa roughness of TA2 is drastically reduced from 242 to 3.98 *** etching for 1 min at a current of 3 A,the surface Sa roughness of pure tungsten,NiTi,and CoCrNi decreases from 9.33,76.4,and 37.6 nm,respectively,to 1.16,2.01,and 2.51 nm,respectively.