Determination of band alignment between GaO_(x)and boron doped diamond for a selective-area-doped termination structure

作     者：王启亮 付诗洋 何思翰 张海波 成绍恒 李柳暗 李红东 Qi-Liang Wang;Shi-Yang Fu;Si-Han He;Hai-Bo Zhang;Shao-Heng Cheng;Liu-An Li;Hong-Dong Li

作者机构：State Key Laboratory of Superhard MaterialsJilin UniversityChangchun 130012China Shenzhen Research InstituteJilin UniversityShenzhen 518057China Guangdong Juxin New Material Technology Co.LtdZhuhai 519000China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第8期

页      面：670-674页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 

基　　金：Project supported by the Key-Area Research and Development Program of Guangdong Province China(Grant No.2020B0101690001)。 

主　　题：GaO_(x) boron-doped diamond edge termination band alignment 

摘      要：An n-GaO_(x)thin film is deposited on a single-crystal boron-doped diamond by RF magnetron sputtering to form the pn heterojunction.The n-Ga Ox thin film presents a small surface roughness and a large optical band gap of 4.85 e V.In addition,the band alignment is measured using x-ray photoelectron spectroscopy to evaluate the heterojunction properties.The GaO_(x)/diamond heterojunction shows a type-Ⅱstaggered band configuration,where the valence and conduction band offsets are 1.28 e V and 1.93 e V,respectively.These results confirm the feasibility of the use of n-GaO_(x)as a termination structure for diamond power devices.