Burst mode enabled ultrafast laser inscription inside gallium arsenide

作     者：Andong Wang Pol Sopeña David Grojo Andong Wang;Pol Sope?a;David Grojo

作者机构：Aix-Marseille UniversityCNRSLP3UMR734113009 MarseilleFrance 

出 版 物：《International Journal of Extreme Manufacturing》 (极端制造（英文）)

年 卷 期：2022年第4卷第4期

页      面：179-187页

核心收录：

学科分类：081702[工学-化学工艺] 080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：This research has received funding from the European Research Council(ERC)under the European Union’s Horizon 2020 research and innovation program(Grant Agreement No.724480) 

主　　题：laser processing ultrafast laser inscription THz-repetition-rate burst semiconductors gallium arsenide 

摘      要：Ultrafast laser inscription(ULI)inside semiconductors offers new perspectives for 3D monolithic structures to be fabricated and new functionalities to be added in electronic and photonic ***,important challenges remain because of nonlinear effects such as strong plasma generation that distort the energy delivery at the focal point when exposing these materials to intense infrared *** to now,the successful technological demonstrations have primarily concentrated on silicon(Si).In this paper,we target at another important semiconductor:gallium arsenide(GaAs).With nonlinearities higher than those of Si,3D-machining of GaAs with femtosecond pulses becomes even ***,we show that the difficulty can be circumvented by burst-mode *** generate and apply trains of pulses at terahertz repetition rates for efficient pulse-to-pulse accumulation of laser-induced free carriers in the focal region,while avoiding an overdose of prefocal *** superior performance of burst-mode irradiation is confirmed by a comparative study conducted with infrared luminescence *** results indicate a successful reduction of the plasma density in the prefocal region so that higher pulse energy reaches the focal *** same method is applied to identify optimum irradiation conditions considering particular cases such as asymmetric pulse trains and aberrated *** 64-pulse trains,we successfully manage to cross the writing threshold providing a solution for ULI inside *** application potential is finally illustrated with a stealth dicing demonstration by taking benefit of the burst *** irradiation method opens wide possibilities for 3D structuring inside GaAs by ULI.