High uniformity and stability of 1S1R directly stacked for high-density cross-point memory applications

作     者：Zhi-Ying Yu Jia-Yi Zhao Guo-Kun Ma Ao Chen Da-Lei Chen Yi-Heng Rao Hao Wang Zhi-Ying Yu;Jia-Yi Zhao;Guo-Kun Ma;Ao Chen;Da-Lei Chen;Yi-Heng Rao;Hao Wang

作者机构：Hubei Yangtze Memory LaboratoriesWuhan430205China School of MicroelectronicHubei UniversityWuhan430062China School of Physics and TechnologyWuhan UniversityWuhan430072China 

出 版 物：《Rare Metals》 (稀有金属（英文版）)

年 卷 期：2022年第41卷第11期

页      面：3671-3676页

核心收录：

学科分类：08[工学] 081201[工学-计算机系统结构] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

基　　金：financially supported by the National Natural Science Foundation of China(No.61904050) the Science and Technology Major Project of Hubei(Nos.2020AAA005 and 2020AEA017) the Scientific Research Project of Education Department of Hubei Province(No.Q20181009) Hubei Key Laboratory of Advanced Memories 

主　　题：Ti stability high 

摘      要：In this letter,the Ti-doped NbO_(x)-based selector is applied to SiNOx-based resistive random-access memory(RRAM),forming Pt/NbOx(Ti-doped)/SiNO_(x)/Ti one selector-one RRAM device(1S1R),to suppress the sneak path *** fabricated 1S1R exhibits stable direct current(DC)endurance(200 cycles),suitable memory window(40),matched selectivity(40)and high uniformity of switching parameters.