Analysis of Line-Edge Roughness Using EUV Scatterometry
作者机构：Helmholtz-Zentrum BerlinAlbert-Einstein Str.1512489BerlinGermany Physikalisch-Technische BundesanstaltAbbestr.2–1210587BerlinGermany Physikalisch-Technische BundesanstaltBundesallee 10038116BraunschweigGermany
出 版 物：《Nanomanufacturing and Metrology》 (纳米制造与计量（英文）)
年 卷 期：2022年第5卷第2期
页 面：149-158页
核心收录：
学科分类：07[理学] 070202[理学-粒子物理与原子核物理] 0702[理学-物理学]
基 金：funding from the Electronic Component Systems for European Leadership Joint Undertaking under grant agreement No 826589|MADEin4 This Joint Undertaking receives support from the European Union’s Horizon 2020 research and innovation programme and The Netherlands,France,Belgium,Germany,Czech Republic,Austria,Hungary,and Israel Open Access funding enabled and organized by Projekt DEAL.
主 题：Line-edge roughness LER LWR EUV scatterometry Debye-Waller factor
摘 要：Smaller and more complex three-dimensional periodic nanostructures are part of the next generation of integrated electronic circuits.Additionally,decreasing the dimensions of nanostructures increases the effect of line-edge roughness on the performance of the nanostructures.Efficient methods for characterizing three-dimensional nanostructures are required for process control.Here,extreme-ultraviolet(EUV)scatterometry is exploited for the analysis of line-edge roughness from periodic nanostructures.In line with previous observations,differences are observed between line edge and line width roughness.The angular distribution of the diffuse scattering is an interplay of the line shape,the height of the structure,the roughness along the line,and the correlation between the lines.Unfortunately,existing theoretical methods for characterizing nanostructures using scatterometry do not cover all these aspects.Examples are shown here and the demands for future development of theoretical approaches for computing the angular distribution of the scattered X-rays are discussed.
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