W-Band High-Efficiency Waveguide Slot Array Antenna with Low Sidelobe Levels Based on Silicon Micromachining Technology
W-Band High-Efficiency Waveguide Slot Array Antenna with Low Sidelobe Levels Based on Silicon Micromachining Technology作者机构：University of Electronic Science and Technology of China
出 版 物：《Chinese Journal of Electronics》 (电子学报(英文))
年 卷 期：2022年第31卷第4期
页 面：665-673页
核心收录：
学科分类：0710[理学-生物学] 080904[工学-电磁场与微波技术] 0810[工学-信息与通信工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0806[工学-冶金工程] 0802[工学-机械工程] 0703[理学-化学]
基 金：supported in part by the National Key Research and Development Plan of China (2018YFB1801505, 2020YFB1807404) the National Natural Science Foundation of China (U19A2056,61631012)
主 题：W-band Micromachined waveguide Silicon micromachining Stepped radiation cavity High effciency Sidelobe level (SLL)
摘 要：A high-efficiency waveguide slot array antenna with low sidelobe level(SLL) is investigated for W-band applications. The silicon micromachining technology is utilized to realize multilayer antenna architecture by three key steps of selective etching, gold plating and Au-Au bonding. The radiating slot based on this technique becomes thick with a minimum thickness of 0.2 mm and accompanies with the decrease of slot s radiation ability. To overcome this weakness, a stepped radiation cavity is loaded on the slot. The characteristic of cavityloaded slot is investigated to synthesize the low-SLL array antenna. The unequal hybrid corporate feeding network is constructed to achieve sidelobe suppression in the E-plane. A pair of 16 × 8 low-SLL and high-effciency slot arrays is fashioned and confirmed experimentally. The bandwidth with the radiation effciency higher than 80% is92.3–96.3 GHz. The SLLs in both E-and H-planes are below-19 d B.
同方期刊数据库