Atomic—Scale Kinetic Monte Carlo Simulation of {100}—Oriented Diamond Film Growth in C—H and C—H—CI Systems by Chemical Vapour Deposition

作     者：安希忠 张禹 等 

作者机构：SchoolofMaterialsScienceandEngineeringUniversityofScienceandTechnologyBeijingBeijing100083 SchoolofAppliedScienceUniversityofScienceandTechnologyBeijingBeijing100083 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2002年第19卷第7期

页      面：1019-1020页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：国家自然科学基金 

主　　题：Chemical vapor deposition 

摘      要：We simulate the {100} -oriented diamond film growth of chemical vapour deposition (CVD) under different models in C-H and C-H-Cl systems in an atomic scale by using the revised kinetic Monte Carlo method. The simulation results show that: (1) the CVD diamond film growth in the C-H system is suitable for high substrate temperature, and the film surface roughness is very coarse; (2) the CVD diamond film can grow in the C-H-Cl system either at high temperature or at low temperature, and the film quality is outstanding; (3) atomic Cl takes an active role for the growth of diamond film, especially at low temperatures. The concentration of atomic Cl should be controlled in a proper range.