Surface properties of Al-doped ZnO thin film before and after CF_4/Ar plasma etching

作     者：Young-Hee JOO Gwan-Ha KIM Doo-Seung UM Chang-Il KIM Young-Hee JOO;Gwan-Ha KIM;Doo-Seung UM;Chang-Il KIM

作者机构：School of Electrical and Electronics EngineeringChung-Ang UniversitySeoul 06974Republic of Korea Department of Semiconductor Materials and ApplicationsKorea PolytechnicSeongnam 13122Republic of Korea Department of Electrical EngineeringSejong UniversitySeoul 05006Republic of Korea 

出 版 物：《Plasma Science and Technology》 (等离子体科学和技术（英文版）)

年 卷 期：2022年第24卷第7期

页      面：194-200页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Research Foundation (NRF) of Korea (Nos. 2018R1D1A1B07051429 and 2020R1G1A1102692) 

主　　题：Al-doped ZnO plasma etching F-based plasma surface characteristics X-ray photoelectron spectroscopy ultraviolet photoelectron spectroscopy 

摘      要：Al-doped ZnO(AZO) is considered as an alternative to transparent conductive oxide *** and achieving a stable surface are important challenges in the development and optimization of dry etching processes, which must be overcome for the application of AZO in various devices. Therefore, in this study, the etch rate and surface properties of an AZO thin film after plasma etching using the adaptive coupled plasma system were investigated. The fastest etch rate was achieved with a CF_(4)/Ar ratio of 50:50 sccm. Regardless of the ratio of CF_(4) to Ar,the transmittance of the film in the visible region exceeded 80%. X-ray photoelectron spectroscopy analysis of the AZO thin film confirmed that metal-F bonding persists on the surface after plasma etching. It was also shown that F eliminates O vacancies. Consequently, the work function and bandgap energy increased as the ratio of CF-4 increased. This study not only provides information on the effect of plasma on AZO thin film, but identifies the cause of changes in the device characteristics during device fabrication.