Preparation of GaN Powder of Nanometer Scale by MOCVD Using DEGA as Precursor

作     者：Yu Ming ZHAO Ke Yan ZHOU Yun Cheng YUAN(Department of Chemistry, Delian University of Technology, Delian 116012) 

作者机构：DALIAN UNIV TECHNOLDEPT CHEMDALIAN 116012PEOPLES R CHINA 

出 版 物：《Chinese Chemical Letters》 (中国化学快报（英文版）)

年 卷 期：1997年第8卷第2期

页      面：185-188页

核心收录：

学科分类：081704[工学-应用化学] 07[理学] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 070301[理学-无机化学] 

主　　题：MOCVD GaN Preparation of GaN Powder of Nanometer Scale by MOCVD Using DEGA as Precursor 

摘      要：GaN powder of nanometer scale was prepared by metal organic chemical vapor deposition using diethylgallium azide as precursor. The resulting powder was characterized by XRD and TEM. It has been found that the particle size of the powder obtained is affected by the deposition temperature, and the fine crystals formed in temperature range 500 similar to 650 degrees C were hexagonal.