Photoexcited carrier dynamics in a GaAs photoconductive switch under nJ excitation

作     者：Ming XU Yi WANG Chun LIU Xinyang SI Rongrong GAO Wei LUO Guanghui QU Wanli JIA Qian LIU 徐鸣;王毅;刘春;司鑫阳;高荣荣;罗伟;屈光辉;贾婉丽;刘骞

作者机构：Applied Physics DepartmentXi'an University of TechnologyXi'an 710048People's Republic of China 

出 版 物：《Plasma Science and Technology》 (等离子体科学和技术（英文版）)

年 卷 期：2022年第24卷第7期

页      面：187-193页

核心收录：

学科分类：080801[工学-电机与电器] 0808[工学-电气工程] 08[工学] 0803[工学-光学工程] 

基　　金：supported in part by National Natural Science Foundation of China(Nos.51877177 and 52007152) in part by the Scientific Research Program Funded by Shaanxi Provincial Education Department(Nos.21JP085 and 21JP088) the Youth Innovation Team of Shaanxi Universities in part by the Natural Science Basic Research Plan of Shaanxi Province(Nos.2021JZ-48 and 2020JM-462) in part by Fellowship of China Postdoctoral Science Foundation(No.2021M702639) in part by Open Research Fund of State Key Laboratory of Pulsed Power Laser Technology(No.SKL2020KF01) 

主　　题：GaAs PCSS high gain(HG) plasma channel filamentary current heat effect 

摘      要：In this article,the bunched transport of photoexcited carriers in a GaAs photoconductive semiconductor switch(PCSS)with interdigitated electrodes is investigated under femtosecond laser *** outputs featuring high gain are obtained for single shots and at 1 kHz by varying the optical excitation *** ensemble three-valley Monte Carlo simulation is utilized to investigate the transient characteristics and the dynamic process of photoexcited *** demonstrates that the presence of a plasma channel can be attributed to the bunching of high-density electron–hole pairs,which are transported in the form of a highdensity filamentary *** results provide a picture of the evolution of photoexcited carriers during transient switching.A photoinduced heat effect is analyzed,which reveals the related failure mechanism of GaAs PCSS at various repetition rates.