Ultrafast Relaxation of Coherent Control Photocurrent in AlGaAs/GaAs Multi Quantum Wells
超快放松的相干控制光电流的AlGaAs / GaAs多量子阱作者机构:StateKeyLaboratoryofOptoelectronicMaterialsandTechnologiesSunYat-SenUniversityGuangzhou510275
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2005年第22卷第1期
页 面:188-190页
核心收录:
学科分类:080903[工学-微电子学与固体电子学] 07[理学] 0809[工学-电子科学与技术(可授工学、理学学位)] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0704[理学-天文学] 0702[理学-物理学]
主 题:GAAS SEMICONDUCTORS CURRENTS Quantum wells Relaxation time Photocurrent gallium arsenides currents Density matrix Semiconductor materials
摘 要:We theoretically and experimentally study the ultrafast dynamics of coherent control photocurrent in As-GaAs/GaAs multi quantum wells at room temperature. A ballistic photocurrent relaxation time of similar to200fs is deduced based on the theory of density matrix and is evidenced with the three-colour femtosecond pump-probe measurements.