Tailoring of Bandgap and Spin-Orbit Splitting in ZrSe_(2) with Low Substitution of Ti for Zr
Tailoring of Bandgap and Spin-Orbit Splitting in ZrSe2 with Low Substitution of Ti for Zr作者机构:National Synchrotron Radiation LaboratoryUniversity of Science and Technology of ChinaHefei 230029China Nanoscale Synthesis&Research LaboratoryDepartment of Applied PhysicsUniversity of KarachiKarachi-75270Pakistan
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2022年第39卷第7期
页 面:69-73页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学]
基 金:supported by the National Key R&D Program of China (Grant No. 2017YFA0402901) the National Natural Science Foundation of China (Grant No. U2032153) the International Partnership Program (Grant No. 211134KYSB20190063) the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB25000000) the USTC Research Funds of the Double First-Class Initiative (Grant No. YD2310002004)
主 题:red Tailoring of Bandgap and Spin-Orbit Splitting in ZrSe_(2)with Low Substitution of Ti for Zr
摘 要:Tuning the bandgap in layered transition metal dichalcogenides(TMDCs) is crucial for their versatile applications in many fields. The ternary formation is a viable method to tune the bandgap as well as other intrinsic properties of TMDCs, because the multi-elemental characteristics provide additional tunability at the atomic level and advantageously alter the physical properties of TMDCs. Herein, ternary Ti_(x)Zr_(1-x)Se_(2) single crystals were synthesized using the chemical-vapor-transport method. The changes in electronic structures of ZrSe_(2) induced by Ti substitution were revealed using angle-resolved photoemission spectroscopy. Our data show that at a low level of Ti substitution, the bandgap of Ti_(x)Zr_(1-x)Se_(2) decreases monotonically, and the electronic system undergoes a transition from a semiconducting to a metallic state without a significant variation of dispersions of valence bands. Meanwhile, the size of spin-orbit splitting dominated by Se 4p orbitals decreases with the increase of Ti doping. Our work shows a convenient way to alter the bandgap and spin-orbit coupling in TMDCs at the low level of substitution of transition metals.