High-performance modified uni-traveling carrier photodiode integrated on a thin-film lithium niobate platform

作     者：XIANGWEN GUO LINBO SHAO LINGYAN HE KEVIN LUKE JESSE MORGAN KEYE SUN JUNYI GAO TA-CHING TZU YANG SHEN DEKANG CHEN BINGTIAN GUO FENGXIN YU QIANHUAN YU MASOUD JAFARI MARKO LONčAR MIAN ZHANG ANDREAS BELING 

作者机构：Department of Electrical and Computer EngineeringUniversity of VirginiaCharlottesvilleVirginia 22903USA John A.Paulson School of Engineering and Applied SciencesHarvard UniversityCambridgeMassachusetts 02138USA HyperLight CorporationCambridgeMassachusetts 02139USA 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2022年第10卷第6期

页      面：1338-1343页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：National Science Foundation(2023775) Air Force Office of Scientific Research(FA 9550-17-1-0071) Defense Advanced Research Projects Agency(HR0011-20-C-0137) 

主　　题：traveling performance modified 

摘      要：Lithium niobate on insulator(LNOI)has become an intriguing platform for integrated photonics for applications in communications,microwave photonics,and ***,integrated devices including modulators,resonators,and lasers with high performance have been recently realized on the LNOI platform,high-speed photodetectors,an essential building block in photonic integrated circuits,have not been demonstrated on LNOI ***,we demonstrate for the first time,heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm *** photodiodes are based on an n-down In GaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited *** integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.