Optically pumped low-threshold microdisk lasers on a GeSn-on-insulator substrate with reduced defect density

作     者：YONGDUCK JUNG DANIEL BURT LIN ZHANG YOUNGMIN KIM HYO-JUN JOO MELVINA CHEN SIMONE ASSALI OUSSAMA MOUTANABBIR CHUAN SENG TAN DONGUK NAM 

作者机构：School of Electrical and Electronic EngineeringNanyang Technological UniversitySingapore 639798Singapore Department of Engineering PhysicsÉcole Polytechnique de MontréalMontréalQuébec H3C 3A7Canada 

出 版 物：《Photonics Research》 (光子学研究（英文版）)

年 卷 期：2022年第10卷第6期

页      面：1332-1337页

核心收录：

学科分类：080901[工学-物理电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080401[工学-精密仪器及机械] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 

基　　金：Mitacs,Innovation for Defence Excellence and Security,IDEaS,PRIMA Québec,Canada Foundation for Innovation,Canada Research Chairs,Natural Sciences and Engineering Research Council of Canada,iGrant of Singapore A*STAR(AME IRG(A2083c0053)) National Research Foundation Singapore(Competitive Research Program(NRF-CRP19-2017-01) NRF-ANR Joint Grant(NRF2018-NRF-ANR009 TIGER)) Ministry of Education-Singapore(Ac RF TIER 12019-T1-002-050(RG 148/19(S)) AcRF TIER 2(MOE2018-T2-2-011(S)) AcRF Tier 2(T2EP50121-0001(MOE-000180-01)) 

主　　题：GeSn pumped polishing 

摘      要：Despite the recent success of GeSn infrared lasers,the high lasing threshold currently limits their integration into practical *** structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers,the effect of defects on the lasing threshold has not been well studied ***,we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold *** first present a method of obtaining high-quality GeSn-oninsulator layers using low-temperature direct bonding and chemical–mechanical ***-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by0 times andtimes,*** result presents a new path towards pushing the performance of GeSn lasers to the limit.