A process/temperature variation tolerant RSSI

作     者：雷倩倩 林敏 石寅 

作者机构：Department of PhysicsXi'an Polytechnic University Suzhou-CAS Semiconductors Integrated Technology Research Center 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2012年第33卷第12期

页      面：106-111页

核心收录：

学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：Project supported by the Doctoral Scientific Starting Research from the Xi'an Polytechnic University 

主　　题：limiter RSSI AGC temperature compensation 

摘      要：A low power process/temperature variation-tolerant CMOS received signal strength indicator （RSSI） and limiter amplifier are designed using SMIC 0.13 μm CMOS technology. The limiter uses six-stage amplifier architecture for minimum power consideration. The RSSI has a dynamic range of more than 60 dB, and the RSSI linearity error is within 4-0.5 dB for an input power from -65 to -8 dBm. The RSSI output voltage is from 0.15 to 1 V and the slope of the curve is 14.17 mV/dB. Furthermore, with the compensation circuit, the proposed RSSI shows good temperature independence and robustness against process variation characteristics. The RSSI with an integrated AGC loop draws 1.5 mA （I and Q paths） from a 1.2 V single supply.