Boron-rich layer removal and surface passivation of boron-doped p–n silicon solar cells

作     者：Caixia Hou Rui Jia Ke Tao Shuai Jiang Pengfei Zhang Hengchao Sun Sanjie Liu Mingzeng Peng Xinhe Zheng 

作者机构：School of Mathematics and Physics Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface ScienceUniversity of Science and Technology Beijing Institute of Microelectronics Chinese Academy of Sciences 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2018年第39卷第12期

页      面：19-22页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：Project supported by the Beijing Municipal Science and Technology Commission,China(No.Z151100003515003) the Beijing Natural Science Foundation(No.4173077,2184112) the Fundamental Research Funds for the Central Universities,China(Nos.FRF-BR-16-018A,FRF-TP-17-022A1,06400071) the National Natural Science Foundation of China(Nos.110751402347,61274134,51402064,61274059,51602340) the Beijing Municipal Innovation and Research Base,China(No.Z161100005016095) the Youth Innovation Promotion Association of Chinese Academy of Sciences(No.2015387) 

主　　题：p^+–n Si solar cell boron-rich layer Al_2O_3/SiN_x stack surface passivation 

摘      要：In boron-doped p+-n crystalline silicon（Si） solar cells, p-type boron doping control and surface passivation play a vital role in the realization of high-efficiency and low cost pursuit. In this study, boron-doped p+-emitters are formed by boron diffusion in an open-tube furnace using borontribromide（BBr3） as precursor. The formed emitters are characterized in detail in terms of shape of the doping profile, surface doping concentration, junction depth, sheet resistance and removal of the boron-rich layer（BRL）. In the aspect of BRL removal, three different methods were adopted to investigate their influence on device performance. The results demonstrate that our proposed chemical etch treatment（CET） with the proper etching time could be an effective way to remove the BRL.After removal of the BRL, Al;O;/SiN;stacks are deposited by atomic layer deposition（ALD） and plasma-enhanced chemical vapor deposition（PECVD） to passivate the cell surface. It was found that a reasonably-high implied Voc of 680 mV has been achieved for the fabricated n-type Si solar cells.