E-beam manipulation of Si atoms on graphene edges with an aberration-corrected scanning transmission electron microscope

作     者：Ondrej Dyck Songkil Kim Sergei V.Kalinin Stephen Jesse 

作者机构：Center for Nanophase Materials ScienceOak Ridge National LaboratoryOak RidgeTN 37830USA Institute for Functional Imaging of MaterialsOak Ridge National LaboratoryOak RidgeTN 37830USA School of Mechanical EngineeringPusan National UniversityBusan 46241Republic of Korea 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2018年第11卷第12期

页      面：6217-6226页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by Oak Ridge National Laboratory's Center for Nanophase Materials Sciences (CNMS) sponsored by the Scientific User Facilities Division, Office of Basic Energy Sciences, U.S. Department of Energy (S. V. K.) by the Laboratory Directed Research and Development Program of Oak Ridge National Laboratory managed by UT-Battelle, LLC, for the U.S. Department of Energy O. D,S. K.and S. J 

主　　题：atomic manipulation graphene scanning transmission electron microscopy edge passivation silicon dopant electron beam dynamics 

摘      要：The burgeoning field of atomic-level material control holds great promise for future breakthroughs in quantum and memristive device manufacture and fundamental studies of atomic-scale chemistry. Realization of atom-by-atom control of matter represents a complex and ongoing challenge. Here, we explore the feasibility of controllable motion of dopant Si atoms at the edges of graphene via the sub-atomically focused electron beam in a scanning transmission electron microscope. We demonstrate that the graphene edges can be cleaned of Si atoms and then subsequently replenished from nearby source material. It is also shown how Si edge atoms may be “pushed from the edge of a small hole into the bulk of the graphene lattice and from the bulk of the lattice back to the edge. This is accomplished through sputtering of the edge of the graphene lattice to bury or uncover Si dopant atoms. Finally, we demonstrate e-beam mediated hole healing and incorporation of dopant atoms. These experiments form an initial step toward general atomic-scale material control.