Influence of Zn ion implantation on structures and field emission properties of multi-walled carbon nanotube arrays
Influence of Zn ion implantation on structures and field emission properties of multi-walled carbon nanotube arrays作者机构:Key Laboratory of Beam Technology and Material Modification of Ministry of Education College of Nuclear Science and Technology Beijing Normal University Beijing China
出 版 物:《Science China(Technological Sciences)》 (中国科学(技术科学英文版))
年 卷 期:2010年第53卷第3期
页 面:776-781页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:supported by the National Basic Research Program of China("973"Project)(Grant No.2010CB832905) the National Natural Science Foundation of China(Grant No.10575011) the Key Scientific and Technological Project of Ministry of Education of China(Grant No.108124)
主 题:multi-walled carbon nanotubes ion implantation field electron emission
摘 要:The structures and field emission properties of multi-walled carbon nanotube arrays implanted with Zn+ by MEVVA ion implanter have been *** results revealed that Zn+implantation induced structural damage and that the top of carbon nanotubes with multi-layered graphite structure were transformed into carbon nanowires with amorphous ***,C:Zn solid solution was synthesized after Zn+ *** turn-on field and threshold field were 0.80 and 1.31 V/μm,respectively for original multi-walled carbon nanotube arrays and were reduced to 0.66 and 1.04 V/μm due to the synthesis of C and Zn composite,in which the work function was reduced after low doses of Zn+*** is indicated that low doses of Zn+implantation can improve field emission performance of multi-walled carbon nanotube ***,high doses of Zn+implantation can reduce field emission properties of multi-walled carbon nanotube arrays,because radiation damage reduces the electric field enhancement factor.