Material-specific high-resolution table-top extreme ultraviolet microscopy

作     者：Wilhelm Eschen Lars Loetgering Vittoria Schuster Robert Klas Alexander Kirsche Lutz Berthold Michael Steinert Thomas Pertsch Herbert Gross Michael Krause Jens Limpert Jan Rothhardt Wilhelm Eschen;Lars Loetgering;Vittoria Schuster;Robert Kias;Alexander Kirsche;Lutz Berthold;Michael Steinert;Thomas Pertsch;Herbert Gross;Michael Krause;Jens Limpert;Jan Rothhardt

作者机构：Institute of Applied PhysicsAbbe Center of PhotonicsFriedrich-SchillerUniversität JenaAlbert-Einstein-Str.1507745 JenaGermany HelmholtzInstitute JenaFröbelstieg 307743 JenaGermany Leibniz Institute of Photonic TechnologyAlbert-Einstein-Straße 907745 JenaGermany Fraunhofer Institute for Microstructure of Materials and Systems IMWSWalterHülse-Str.106120 HalleGermany Fraunhofer Institute for Applied Optics and Precision Engineering IOFAlbert-Einstein-Str.707745 JenaGermany 

出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)

年 卷 期：2022年第11卷第5期

页      面：991-1000页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：supported by the Federal State of Thuringia(2017 FGR 0076) the European Social Fund(ESF) the Thüringer Aufbaubank(TAB)for funding the junior research group HOROS(FKZ:2017 FGR 0076) the European Research Council(ERC)under the European Union’s Horizon 2020 research and innovation programm(grant agreement No.,SALT) 

主　　题：resolution ultraviolet extreme 

摘      要：Microscopy with extreme ultraviolet(EUV)radiation holds promise for high-resolution imaging with excellent material contrast,due to the short wavelength and numerous element-specific absorption edges available in this spectral *** the same time,EUV radiation has significantly larger penetration depths than *** thus enables a nano-scale view into complex three-dimensional structures that are important for material science,semiconductor metrology,and next-generation ***,we present high-resolution and material-specific microscopy at 13.5 nm *** combine a highly stable,high photon-flux,table-top EUV source with an interferometrically stabilized ptychography *** utilizing structured EUV illumination,we overcome the limitations of conventional EUV focusing optics and demonstrate high-resolution microscopy at a half-pitch lateral resolution of 16 ***,we propose mixed-state orthogonal probe relaxation ptychography,enabling robust phase-contrast imaging over wide fields of view and long acquisition *** this way,the complex transmission of an integrated circuit is precisely reconstructed,allowing for the classification of the material composition of mesoscopic semiconductor systems.