Dependency of photoluminescence from SiO2 thin films containing Si1-xGex quantum dots on Ge/Si doping ratio

作     者：仲坤 肖志松 程国安 程向前 郑瑞廷 

作者机构：Key Laboratory of Beam Technology and Material Modification of Ministry of EducationCollege of Nuclear Science and TechnologyBeijing Normal University Department of PhysicsSchool of ScienceBeihang University 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2009年第7卷第9期

页      面：826-829页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：This work was supported by the National Natural Science Foundation of China(Nos.10605007 and 10604003) Beijing Nova Project(No.2006B15) Beijing Municipal Science and Technology Commission,the Program for New Century Excellent Talents in University(No.NCET-07-0045) the of Beam Technology and Foundation of Key Laboratory Materials Modification of Ministry of Education,Beijing Normal University 

主　　题：Germanium   Ion bombardment   Ion implantation   Light emission   Photoluminescence   Semiconductor quantum dots   Silicon   Thin films 

摘      要：SiO2 thin films containing Si1-xGex quantum dots （QDs） are prepared by ion implantation and annealing treatment. The photoluminescence （PL） and microstructural properties of thin films are investigated. The samples exhibit strong PL in the wavelength range of 400-470 nm and relatively weak PL peaks at 730 and 780 nm at room temperature. Blue shift is found for the 400-nm PL peak, and the intensity increases initially and then decreases with the increase of Ge-doping dose. We propose that the 400-470 nm PL band originates from multiple luminescence centers, and the 730- and 780-nm PL peaks are ascribed to the Si=O and GeO luminescence centers.