Monolithic thin film lithium niobate electro-optic modulator with over 110 GHz bandwidth

作     者：杨帆 方先松 陈心羽 朱立新 张帆 陈章渊 李艳萍 Fan Yang;Xiansong Fang;Xinyu Chen;Lixin Zhu;Fan Zhang;Zhangyuan Chen;Yanping Li

作者机构：State Key Laboratory of Advanced Optical Communication Systems and NetworksDepartment of ElectronicsPeking UniversityBeijing 100871China Frontiers Science Center for Nano-optoelectronicsPeking UniversityBeijing 100871China 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2022年第20卷第2期

页      面：148-152页

核心收录：

学科分类：081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 0804[工学-仪器科学与技术] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：This work was supported by the National Natural Science Foundation of China(Nos.61690194 and 61911530162)。 

主　　题：lithium niobate electro-optic modulator high bandwidth photolithography wet etching 

摘      要：High-performance thin film lithium niobate(LN) electro-optic modulators with low cost are in demand. Based on photolithography and wet etching, we experimentally demonstrate a thin film LN Mach–Zehnder modulator with a 3 d B bandwidth exceeding 110 GHz, which shows the potential of boosting the throughput and reducing cost. The fabricated modulator also exhibits a comparable low half-wave voltage-length product of ~2.37 V · cm, a high extinction ratio of 23 d B, and the propagation loss of optical waveguides of ~0.2 d B/cm. Besides, six-level pulse amplitude modulation up to 250 Gb/s is successfully achieved.