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Electrodeposition and characterization of thermoelectric Bi_2Se_3 thin films

Electrodeposition and characterization of thermoelectric Bi_2Se_3 thin films

作     者:Xiao-long Li Ke-feng Cai Hui Li Ling Wang Chi-wei Zhou 

作者机构:Functional Materials Research Laboratory Tongji University Shanghai 200092 China 

出 版 物:《International Journal of Minerals,Metallurgy and Materials》 (矿物冶金与材料学报(英文版))

年 卷 期:2010年第17卷第1期

页      面:104-107页

核心收录:

学科分类:081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学] 

基  金:supported by the Major State Basic Research Development Program of China (No.2007CB607500.) 

主  题:thermoelectric thin films bismuth selenide electrodeposition thermoelectric properties cold isostafic pressing 

摘      要:Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3.

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