Electrodeposition and characterization of thermoelectric Bi_2Se_3 thin films
Electrodeposition and characterization of thermoelectric Bi_2Se_3 thin films作者机构:Functional Materials Research Laboratory Tongji University Shanghai 200092 China
出 版 物:《International Journal of Minerals,Metallurgy and Materials》 (矿物冶金与材料学报(英文版))
年 卷 期:2010年第17卷第1期
页 面:104-107页
核心收录:
学科分类:081702[工学-化学工艺] 07[理学] 070205[理学-凝聚态物理] 08[工学] 0817[工学-化学工程与技术] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
基 金:supported by the Major State Basic Research Development Program of China (No.2007CB607500.)
主 题:thermoelectric thin films bismuth selenide electrodeposition thermoelectric properties cold isostafic pressing
摘 要:Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3.