Microstructure and electrical properties of Y_2O_3-doped ZnO-based varistor ceramics prepared by high-energy ball milling

作     者：Hongyu Liu Xueming Ma Dongmei Jiang Wangzhou Shi 

作者机构：College of Science Wuhan University of Science and Technology Wuhan 430081 China Department of Physics East China Normal University Shanghai 200062 China 

出 版 物：《Journal of University of Science and Technology Beijing》 (北京科技大学学报（英文版）)

年 卷 期：2007年第14卷第3期

页      面：266-270页

核心收录：

学科分类：080503[工学-材料加工工程] 0806[工学-冶金工程] 08[工学] 0818[工学-地质资源与地质工程] 0815[工学-水利工程] 0805[工学-材料科学与工程（可授工学、理学学位）] 0813[工学-建筑学] 0703[理学-化学] 0802[工学-机械工程] 0814[工学-土木工程] 0801[工学-力学（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：inorganic materials electrical properties high-energy ball milling varistor microstructure low-temperature sintering zinc oxide yttrium oxide 

摘      要：Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA, and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor con- centration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.