Artificial synaptic and self-rectifying properties of crystalline(Na_(1-x)K_(x))NbO_(3)thin films grown on Sr_(2)Nb_(3)O_(10)nanosheet seed layers

作     者：In-Su Kim Jong-Un Woo Hyun-Gyu Hwang Bumjoo Kim Sahn Nahm In-Su Kim;Jong-Un Woo;Hyun-Gyu Hwang;Bumjoo Kim;Sahn Nahm

作者机构：Department of Materials Science and EngineeringKorea UniversitySeoul 02841Republic of Korea KU-KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoul 02841Republic of Korea 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2022年第123卷第28期

页      面：136-143页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：supported by the National Research Foundation of Korea(NRF)grant funded by the Korea government(MSIT)(No.2020R1A2B5B01002063) the KU-KIST Graduate School Program of the Korea University 

主　　题：Bipolar switching properties Self-rectifying bipolar switching properties Artificial synaptic properties Crystalline NKN thin film Sr_(2)Nb_(3)O_(10)nanosheet seed layer 

摘      要：Crystalline(Na_(1-x)K_(x))NbO_(3)(NKN)thin films were deposited on Sr_(2)Nb_(3)O_(10)/TiN/Si(S-TS)substrates at 370°***_(2)Nb_(3)O_(10)(SNO)nanosheets served as a template for the formation of crystalline NKN films at low *** the NKN film was deposited on one SNO monolayer,the NKN memristor exhibited normal bipolar switching characteristics,which could be attributed to the formation and destruction of oxygen vacancy ***,the NKN memristor with one SNO monolayer exhibited artificial synaptic ***,the NKN memristor deposited on two SNO monolayers exhibited self-rectifying bipolar switching properties,with the two SNO monolayers acting as tunneling barriers in the *** conduction mechanism of the NKN memristor with two SNO monolayers in the highresistance state is attributed to Schottky emission,direct tunneling,and Fowler–Nordheim(FN)*** current conduction in this memristor in the low-resistance state was governed by direct tunneling and FN ***,the NKN memristor with two SNO monolayers exhibited large ON/OFF and rectification ratios and artificial synaptic ***,an NKN memristor with two SNO monolayers can be used for fabricating artificial synaptic devices with a cross-point array structure.