Hydrogen roles approaching ideal electrical and optical properties for undoped and Al doped ZnO thin films
作者机构：Laboratory of Advanced MaterialsUniversity of ScienceHoChiMinh City700000Viet Nam Vietnam National UniversityHoChiMinh City700000Viet Nam HoChiMinh City Institute of PhysicsHoChiMinh City700000Viet Nam Institute of Atomic and Molecular SciencesAcademia SinicaTaipei10617Taiwan Center for Innovative Materials and Architectures(INOMAR)HoChiMinh City700000Viet Nam Faculty of Materials Science&TechnologyUniversity of ScienceHoChiMinh City700000Viet Nam
出 版 物：《Journal of Materiomics》 (无机材料学学报（英文）)
年 卷 期：2022年第8卷第1期
页 面：123-135页
核心收录：
学科分类：081702[工学-化学工艺] 070207[理学-光学] 0808[工学-电气工程] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学]
基 金：funded by Vietnam National University HoChiMinh City(VNU-HCM)under the grant number B2017-18-09 and TX2021-50-01 Faculty of Materials Science and Technology and Faculty of Physics and Engineering Physics,University of Science,VNU-HCM for supporting the Hall-effect and Raman measurements,respectively.
主 题：High electron mobility Hydrogen roles Passivation effects Effective electron mass DFT calculations Doped ZnO thin Film
摘 要：This paper distinguished hydrogen roles to improve electron mobility and carrier concentration in ZnO and Al doped ZnO sputtered films.By combining experimental evidences and theoretical results,we find out that hydrogen located at oxygen vacancy sites(H_(O))is the main factor gives rise to increase simultaneously mobility and carrier concentration which has not been mentioned before.Introducing appropriate hydrogen content during sputtering not only results in crystalline relaxation but also supports doping Al into ZnO,increasing carrier concentration and electron mobility in the film.First principles calculations confirmed hydrogen substitutional stability for oxygen vacancy,significantly reducing electron conductivity effective mass and hence increasing electron mobility.In particular,0.8%hydrogen partial pressure ratio achieved 61 cm^(2)V^(-1)s^(-1)maximum electron mobility,optical transmittance above 82%in visible and near-infrared regions,and 2×10^(20) cm^(-3)carrier concentrations for H-Al co-doped ZnO film.These values approach ideal electrical and optical properties for transparent conducting oxide films.The presence of one maximum electron mobility was attributed to competition between increasing mobility due to restoring effective electron mass and hydrogen passivation of native defects,and decreased electron mobility due to electron-phonon scattering.
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