Quantum Oscillations in Noncentrosymmetric Weyl Semimetal SmAlSi
Quantum Oscillations in Noncentrosymmetric Weyl Semimetal SmAlSi作者机构:School of Physical Science and TechnologyShanghaiTech UniversityShanghai 201210China ShanghaiTech Laboratory for Topological PhysicsShanghaiTech UniversityShanghai 201210China Department of PhysicsClarendon LaboratoryUniversity of OxfordParks RoadOxford OX13PUUK Shanghai Key Laboratory of High-resolution Electron MicroscopyShanghaiTech UniversityShanghai 201210China
出 版 物:《Chinese Physics Letters》 (中国物理快报(英文版))
年 卷 期:2022年第39卷第4期
页 面:67-73页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程(可授工学、理学学位)] 0704[理学-天文学] 0702[理学-物理学]
基 金:supported by the National Key R&D Program of China(Grant Nos.2018YFA0704300 and 2017YFB0503302) the National Natural Science Foundation of China(Grant Nos.U1932217,11974246,12004252,61771234,and 12004251) the Natural Science Foundation of Shanghai(Grant Nos.19ZR1477300 and 20ZR1436100) the Science and Technology Commission of Shanghai Municipality(Grant Nos.19JC1413900 and YDZX20203100001438) the Shanghai Science and Technology Plan(Grant No.21DZ2260400),the Shanghai Sailing Program(Grant No.21YF1429200) the Interdisciplinary Program of Wuhan National High Magnetic Field Center(Grant No.WHMFC202124) the Beijing National Laboratory for Condensed Matter Physics the support from Analytical Instrumentation Center(Grant No.SPST-AIC10112914) Centre for High-resolution Electron Microscopy(ChEM)(Grant No.EM02161943),SPST,Shanghai Tech University
主 题:symmetric quantum nontrivial
摘 要:As a new type of quantum state of matter hosting low energy relativistic quasiparticles,Weyl semimetals(WSMs)have attracted significant attention for scientific community and potential quantum device *** this study,we present a comprehensive investigation of the structural,magnetic,and transport properties of noncentrosymmetric RAl Si(R=Sm,Ce),which have been predicted to be new magnetic WSM *** samples exhibit nonsaturated magnetoresistance,with about 900%and 80%for Sm Al Si and Ce Al Si,respectively,at temperature of 1.8 K and magnetic field of 9 *** carrier densities of Sm Al Si and Ce Al Si exhibit remarkable change around magnetic transition temperatures,signifying that the electronic states are sensitive to the magnetic ordering of rare-earth *** low temperatures,Sm Al Si reveals prominent Shubnikov–de Haas oscillations associated with the nontrivial Berry ***-pressure experiments demonstrate that the magnetic order is robust and survival under high *** results would yield valuable insights into WSM physics and potentials in applications to next-generation spintronic devices in the RAl Si(R=Sm,Ce)family.