Deposition of nanoporous BiVO;thin-film photocatalyst by reactive magnetron sputtering: Effect of total pressure and substrate

作     者：Siavash BAKHTIARNIA Saeed SHEIBANI Alain BILLARD Eric AUBRY Mohammad ARAB POUR YAZDI Siavash BAKHTIARNIA;Saeed SHEIBANI;Alain BILLARD;Eric AUBRY;Mohammad ARAB POUR YAZDI

作者机构：School of Metallurgy and Materials EngineeringCollege of EngineeringUniversity of TehranTehranIran Institut FEMTO-STUMR 6174CNRSUniv.Bourgogne Franche-Comté15BAvenue des Montboucons25030 BesançonFrance 

出 版 物：《Transactions of Nonferrous Metals Society of China》 (中国有色金属学报（英文版）)

年 卷 期：2022年第32卷第3期

页      面：957-971页

核心收录：

学科分类：081704[工学-应用化学] 081705[工学-工业催化] 07[理学] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0817[工学-化学工程与技术] 0703[理学-化学] 

基　　金：the supports of this study by the Iran National Science Foundation (No. 98001285) Pays de Montbéliard Agglomération (France) for the support of this work 

主　　题：photocatalysis BiVO4 thin film sputtering nanoporous film 

摘      要：Nanoporous BiVO;thin films were deposited using reactive magnetron sputtering in Ar and O;atmosphere, on various substrates, employing pulsed direct-current(DC) power supplies applied to metallic Bi and V targets for rapid deposition. The procedure was followed by a post-annealing treatment in air to crystallize the photoactive monoclinic scheelite structure. The influence of total pressure and substrate on the crystal structure, morphology, microstructure, optical and photocatalytic properties of the films was investigated. The crystallization of monoclinic scheelite structure deposited on fused silica substrate starts at 250 ℃ and the films are stable up to 600 ℃. The morphology of the films is rather dense, despite at the high sputtering pressure(2 Pa), with embedded nanopores. Among the thin films deposited on fused silica, the one deposited at 4.5 Pa exhibits the highest porosity(52%), with the lowest bandgap(2.44 eV) and it shows the highest photocatalytic activity in the degradation of Rhodamine-B(26% after 7 h) under visible light irradiation. The film deposited on the silicon substrate exhibits the highest photoactivity(53% after 7 h). Lack of hypsochromic shift in the UV-Vis temporal absorption spectra shows the dominance of the chromophore cleavage pathway in the photodecomposition.