Anisotropic in-plane thermal conductivity for multi-layer WTe_(2)

作     者：Yuehua Wei Chuyun Deng Xiaoming Zheng Yangbo Chen Xiangzhe Zhang Wei Luo Yi Zhang Gang Peng Jinxin Liu Han Huang Weiwei Cai Qi Ge Renyan Zhang Xueao Zhang Shiqiao Qin 

作者机构：College of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China College of Arts and SciencesNational University of Defense TechnologyChangsha 410073China College of Physical Science and TechnologyXiamen UniversityXiamen 361005China Hunan Key Laboratory of Super-microstructure and Ultrafast ProcessSchool of Physics and ElectronicsCentral South UniversityChangsha 410083China Chongqing 2D Materials InstituteLiangjiang New AreaChongqing 400714China 

出 版 物：《Nano Research》 (纳米研究（英文版）)

年 卷 期：2022年第15卷第1期

页      面：401-407页

核心收录：

学科分类：08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 

基　　金：supported by the National Natural Science Foundation of China(Nos.61801498,11404399,11874423,and 51701237) the National Defense Science and Technology Innovation Zone,the Scientific Researches Foundation of National University of Defense Technology(Nos.ZK18-01-03,ZK18-03-36,ZK20-16,and ZZKY-YX-08-06) the China Postdoctoral Science Foundation(CPSF)(No.2019M663569) the Youth Talent Lifting Project(No.17-JCJQ-QT-004) 

主　　题：WTe_(2) anisotropy in-plane thermal conductivity Raman thermometry with electrical heating Raman spectrum 

摘      要：Improving thermal transport between substrate and transistors has become a vital solution to the thermal challenge in *** 2D WTe_(2) has sparked extensive interest because of heavy atomic mass and low Debye ***,the thermal transport of supported WTe_(2) was studied via Raman thermometry with electrical *** supported 30 nm WTe2 encased with 70 nm Al_(2)O_(3) delivered 4.8 W·m^(-1)·K^(-1)in-plane thermal conductivity along zigzag direction at room temperature,which was almost 1.6 times larger than that along armchair direction(3.0 W·m^(-1)·K^(-1)).Interestingly,the superior and inferior directions for thermal transport are just opposite of those for electrical ***,a heat manipulation model in WTe_(2) FET device was *** the designed configuration,waste heat in WTe_(2) would be mostly dissipated to metal contacts located along zigzag,relieving the local temperature discrepancy in the channel effectively and preventing degradation or *** study provides new insight into thermal transport of anisotropic 2D materials,which might inspire energy-efficient nanodevices in the future.