Fabrication and Gas Response Characteristics of Metal Semiconductor Nanostructures Grown by Ambient Pressure

作     者：Sang-Rok Lee Kap-Duk Song Yang-Rye Lim Byung-Su Joo Myoung-Ho Sohn Duk-Dong Lee 

作者机构：School of Electronic Engineering & Computer ScienceSankyuk-Dong 1370Bukgu Daegu 702-701Korea Department of Sensor and Display engineeringSankyuk-Dong 1370Bukgu Daegu 702-701Korea 

出 版 物：《稀有金属材料与工程》 (Rare Metal Materials and Engineering)

年 卷 期：2006年第35卷第A03期

页      面：182-184页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：SnO2 nanowires ZnO nanorods CO NO_x 

摘      要：SnO_2 nanowires and ZnO nanorods were grown on the surface of thin film by heat treatment of mental Sn and Zn under Ar gas flow and O_2 atmospheric *** sensitivity of the SnO_2 thin film device on which grown nanowires to CO gas(concentration of 5000μg/g)was 50% at the operating temperature of 200℃.In case of using Pt as catalysts,the sensitivity was enhanced and operating temperature was reduced(sensitivity of 70% at the operating temperature of 150℃). The sensitivity of the ZnO nanorods device using Cu as catalysts to NO_x gas was 90% at the operating temperature of 200℃.It was found that the sensitivity to CO and NO_x gases for the device on which grown nanostructures was much higher than those for general thin films devices.