Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping

作     者：Jiaming Wang Mingxing Wang Fujun Xu Baiyin Liu Jing Lang Na Zhang Xiangning Kang Zhixin Qin Xuelin Yang Xinqiang Wang Weikun Ge Bo Shen Jiaming Wang;Mingxing Wang;Fujun Xu;Baiyin Liu;Jing Lang;Na Zhang;Xiangning Kang;Zhixin Qin;Xuelin Yang;Xinqiang Wang;Weikun Ge;Bo Shen

作者机构：State Key Laboratory of Artificial Microstructure and Mesoscopic PhysicsSchool of PhysicsPeking University100871 BeijingChina Nano-optoelectronics Frontier Center of Ministry of EducationPeking University100871 BeijingChina Collaborative Innovation Center of Quantum Matter100871 BeijingChina 

出 版 物：《Light(Science & Applications)》 (光（科学与应用)（英文版）)

年 卷 期：2022年第11卷第4期

页      面：654-661页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：the National Key Research and Development Program of China(Nos.2016YFB0400101,and 2018YFE0125700) the National Natural Science Foundation of China(Nos.61974002,62075081,and 61927806) the Key-Area Research and Development Program of Guangdong Province(No.2020B010172001) the Major Scientific and Technological Innovation Project(MSTIP)of Shandong Province(No.2019JZZY010209) 

主　　题：AlGaN ultrathin GaN 

摘      要：Solving the doping asymmetry issue in wide gap semiconductors is a key dificulty and long-standing challenge for device ***,a desorption-tailoring strategy is proposed to juggle the carrier concentration and *** to the p-doping issue in Al-rich AlGaN,self-assembled p-AlGaN superlattices with an average Al composition of over 50%are prepared by adopting this *** hole concentration as high as 8.1×10^(18)cm^(-3)is thus realized at room temperature,which is attributed to the signifcant reduction of effective Mg activation energy to 17.5 meV through modulating the activating path,as well as the highlighted Mg surface-incorporation by an intentional interruption for *** importantly,benefting from the constant ultrathin barrier thickness of only three monolayers via this approach,vertical miniband transport of holes is verifed in the p-AlGaN superlattices,greatly satisfying the demand of hole injection in device application.280 nm deep-ultraviolet light emitting diodes are then fabricated as a demo with the desorption-tailored Al-rich p-AlGaN superlattices,which exhibit a great improvement of the carrier injection efficiency and light extraction efficiency,thus leading to a 55.7%increase of the light output *** study provides a solution for p-type doping of Al-rich AlGaN,and also sheds light on solving the doping asymmetry issue in general for wide-gap semiconductors.