Dipolar spin relaxation of divacancy qubits in silicon carbide

作     者：Oscar Bulancea-Lindvall Nguyen T.Son Igor A.Abrikosov Viktor Ivády 

作者机构：Department of PhysicsChemistry and BiologyLinköping UniversitySE-58183 LinköpingSweden Wigner Research Centre for PhysicsHungarian Academy of SciencesPO Box 49H-1525 BudapestHungary Max-Planck-Institut für Physik komplexer SystemeNöthnitzer Straße 38D-01187 DresdenGermany 

出 版 物：《npj Computational Materials》 (计算材料学（英文）)

年 卷 期：2021年第7卷第1期

页      面：1974-1984页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：We acknowledge support from the Knut and Alice Wallenberg Foundation through the WBSQD2 project(Grant No.2018.0071) Support from the Swedish Government Strategic Research Area SeRC and the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linköping University(Faculty Grant SFO-Mat-LiU No.200900971)is gratefully adknowledged.V.l.adknowledges the support from the MTA Premium Postdoctoral Research Program,the Hungarian NKFIH grantsNo.KKP129866 of the National Excellence Program of Quantum-coherent materials project the NKFIH through the National Quantum Technology Program(Grant No.2017-1.2.1-NKP-2017-00001) the Quantum Information National Laboratory sponsored by the Ministry of Innovation and Technology of Hungary.N.T.S.adknowl-edges the support from the Swedish Research Coundl(Grant Na.VR 2016-04068) the EU H2020 project QuanTELCO(Grant No.862721) The calculations were performed on resources provided by the Swedish National Infrastructure for Computing(SNIC)at the National Supercomputer Centre(NSC)partially funded by the Swedish Research Council through grant agreement No.2018-05973. 

主　　题：relaxation vacancy resonant 

摘      要：Divacancy spins implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host On the other hand,there are still numerous open questions about the physics of these important defects,for instance,spin relaxation has not been thoroughly studied yet.Here,we carry out a theoretical study on environmental spin-induced spin relaxation processes of divacancy qubits in the 4H polytype of silicon carbide(4H-SiC).We reveal all the relevant magnetic field values where the longitudinal spin relaxation time T,drops resonantly due to the coupling to either nuclear spins or electron spins.We quantitatively analyze the dependence of the T,time on the concentration of point defect spins and the applied magnetic field and provide ananalytical expression.We demonstrate that dipolar spin relaxation plays a significant role both in as-grown and ion-implanted samples and it often limits the coherence time of divacancy qubits in 4H-SiC.