High thermoelectric performance of ZrTe_(2)/SrTiO_(3) heterostructure

作     者：Chun Hung Suen Long Zhang Kunya Yang M.Q.He Y.S.Chai K.Zhou Huichao Wang X.Y.Zhou Ji-Yan Dai Chun Hung Suen;Long Zhang;Kunya Yang;M.Q.He;Y.S.Chai;K.Zhou;Huichao Wang;X.Y.Zhou;Ji-Yan Dai

作者机构：Department of Applied PhysicsThe Hong Kong Polytechnic UniversityHung HomKowloonHong KongChina College of PhysicsChongqing UniversityChongqing401331China School of PhysicsSun Yat-sen UniversityGuangzhou510275China 

出 版 物：《Journal of Materiomics》 (无机材料学学报（英文）)

年 卷 期：2022年第8卷第3期

页      面：570-576页

核心收录：

学科分类：0808[工学-电气工程] 081704[工学-应用化学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0817[工学-化学工程与技术] 0806[工学-冶金工程] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0703[理学-化学] 0702[理学-物理学] 

基　　金：We thank support from Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices(GDSTC No.2019B121205001) International Collaboration project(No.121631KYSB20190026) The Hong Kong Polytechnic University(Grant Nos.1-ZVSQ,UAEZ) X.Zhou acknowledges financial support from National Natural Science Foundation of China(NSFC)(Grant No.11674040,11904039) the Fundamental Research Funds for the Central Universities(Grant no.2018CDQYWL0048,106112017CDJQJ308821 and 2018CDPTCG0001/26) H.W.acknowledges the support from the National Natural Science Foundation of China(Grant No.12004441,92165204) the Hundreds of Talents program of Sun Yat-sen University and the Fundamental Research Funds for the Central Universities(No.20lgpy165,202lqntd27) 

主　　题：Thermoelectric ZrTe_(2)thin film High mobility Interface Transition metal dichalcogenides 

摘      要：Achieving high thermoelectric pe rformance in thin fiIm heterostructures is essental for integrated and minlatured ther moelectric device *** this work,we d emonstrate a mechansm and device performance of enh anced themoelectnic perfomance induced by interfuclal effect in a tansitdon metal dichalcogenides SrTiO_(3)(STO)heterpstructure Owing to the fomed conductive interface and elevated *** ZrTe_(2)/STO he teras tructure presents large thermoelectric power factor of 3.7×10^(5)μWcm^(-1)K^(-2) at 10 *** ion of quasi-wo dimensional conductance at the interface s atributed for the lage Seebeck coffcent and high electnical conductivity leading to high thermoelectric perfor mance which is demonstrated by a prototype device attaining 3 K cooling with 100 mA current input to this heterostructure This supenior themoelectnic property makes this he teros tructure a promtsing candidate for future thermoelectric device.