Fabrication of the high-Q Si_(3)N_(4) microresonators for soliton microcombs

作     者：万帅 牛睿 彭金兰 李锦 郭光灿 邹长铃 董春华 Shuai Wan;Rui Niu;jin-Lan Peng;jin Li;Guang-Can Guo;Chang-Ling Zou;Chun-Hua Dong

作者机构：CAS Key Laboratory of Quantum InformationUniversity of Science and Technology of ChinaHefei 230026China CAS Center For Excellence in Quantum Information and Quantum PhysicsUniversity of Science and Technology of ChinaHefei 230026China Center for Micro and Nanoscale Research and FabricationUniversity of Science and Technology of ChinaChinese Academy of SciencesHefei 230026China 

出 版 物：《Chinese Optics Letters》 (中国光学快报（英文版）)

年 卷 期：2022年第20卷第3期

页      面：111-116页

核心收录：

学科分类：080904[工学-电磁场与微波技术] 070207[理学-光学] 07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：This work was supported by the National Key Research and Development Program of China(No.2020YFB2205801) National Natural Science Foundation of China(Nos.11934012,11874342,and 92050109) the Fundamental Research Funds for the Central Universities.C.H.Dong was also supported by the State Key Laboratory of Advanced Optical Communication Systems and Networks,Shanghai Jiao Tong University,China.This work was partially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication.The authors declare no conflicts of interest 

主　　题：silicon nitride microresonator optical frequency comb dissipative Kerr soliton 

摘      要：The microresonator-based soliton microcomb has shown a promising future in many *** this work,we report the fabrication of high quality[Q]Si_(3)N_(4)microring resonators for soliton microcomb *** developing the fabri-cation process with crack isolation trenches and annealing,we can deposit thick stoichiometric Si3N4 film of 800 nm without cracks in the central *** highest intrinsic Q of the Si_(3)N_(4)microring obtained in our experiments is about 6×10^(6),corresponding to a propagation loss as low as 0.058 dBm/*** such a high Q film,we fabricate microrings with the anomalous dispersion and demonstrate the generation of soliton microcombs with 100 mW on-chip pump power,with an optical parametric oscillation threshold of only 13.4 *** Si_(3)N_(4)integrated chip provides an ideal platform for researches and applications of nonlinear photonics and integrated photonics.