Effect of Heavily Doped Boron on Bandgap Narrowing of Strained SiGe Layers

作     者：姚飞 薛春来 成步文 王启明 

作者机构：State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2007年第24卷第6期

页      面：1686-1689页

核心收录：

学科分类：07[理学] 070203[理学-原子与分子物理] 0805[工学-材料科学与工程（可授工学、理学学位）] 0704[理学-天文学] 0702[理学-物理学] 

基　　金：Supported by the National High Technology Research and Development Programme of China under Grant No 2006AA03Z0415  the Major State Basic Research Programme of China under Grant No 2006CB302802  and the National Natural Science Foundation of China under Grant Nos 60336010 and 60676005 

主　　题：TRANSISTORS HBTS GE 

摘      要：Taking into account the compensation effect of B to Ge in strained SiGe layers for the first time, the effect of heavily doped boron on the bandgap narrowing of strained SiGe layers is calculated, and the classical JainRoulston （J-R） model is modified. The results show that our modified J-R model well fits the experimental values. Based on the modified J-R model, the real bandgap narrowing distribution between the conduction and valence bands is further calculated, which has great influence on modelling the electrical characteristics of SiGe heterojunction bipolar transistors.