Intrinsic V vacancy and large magnetoresistance in V_(1-δ)Sb_(2)single crystal

作     者：Yong Zhang Xinliang Huang Jinglei Zhang Wenshuai Gao Xiangde Zhu Li Pi 张勇;黄新亮;张警蕾;高文帅;朱相德;皮雳

作者机构：Institutes of Physical Science and Information TechnologyAnhui UniversityHefei 230601China Anhui Province Key Laboratory of Condensed Matter Physics at Extreme ConditionsHigh Magnetic Field Laboratory of the Chinese Academy of SciencesHefei 230031China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2022年第31卷第3期

页      面：475-481页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China (Grant Nos. U2032214, U2032163, and 11904002) the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017483) the Natural Science Foundation of Anhui Province, China (Grant No. 1908085QA15) 

主　　题：binary pnictide semimetals vanadium vacancy flat band weak anti-localization 

摘      要：The binary pnictide semimetals have attracted considerable attention due to their fantastic physical properties that include topological effects, negative magnetoresistance, Weyl fermions, and large non-saturation magnetoresistance. In this paper, we have successfully grown the high-quality V_(1-δ)Sb_(2) single crystals by Sb flux method and investigated their electronic transport properties. A large positive magnetoresistance that reaches 477% under a magnetic field of 12 T at T = 1.8 K was observed. Notably, the magnetoresistance showed a cusp-like feature at the low magnetic fields and such feature weakened gradually as the temperature increased, which indicated the presence of a weak antilocalization effect(WAL). In addition, based upon the experimental and theoretical band structure calculations, V_(1-δ)Sb_(2) is a research candidate for a flat band.