Prediction of electromigration failure in passivated polycrystalline line
Prediction of electromigration failure in passivated polycrystalline line作者机构:Department of Intelligent Machines and System Engineering Hirosaki University 3 Bunkyo-cho Hirosaki 036-8561 JapanDepartment of Mechanical Engineering Tohoku University 01 Aoba Aramaki Aoba-ku Sendai 980-8579 JapanDepartment of Mechanical Engineering Tohoku University 01 Aoba Aramaki Aoba-ku Sendai 980-8579 JapanTohoku University 2-1-1 Katahira Aoba-ku Sendai 980-8577 Japan
出 版 物:《光学精密工程》 (Optics and Precision Engineering)
年 卷 期:2003年第11卷第2期
页 面:114-119页
核心收录:
学科分类:07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学] 0702[理学-物理学]
摘 要:Recently, a governing parameter for electromigration damage in passivated polycrystalline lines, AFD*gen, was formulated considering the effect of the atomic density gradient. In this study, a prediction method for electromigration failure in a passivated polycrystalline line was proposed using AFD*gen. The characteristics of film used for prediction is established in advance using a method based on AFD*gen. The film characteristics of metal lines with different lengths were determined experimentally by AFD*gen_based method. From the film characteristics obtained, both lifetime and location of failure in the passivated polycrystalline lines were predicted through numerical simulation of failure process. Good agreement has been shown between the predicted and the experimental results concerning both lifetime and location of failure.