利用高压拉曼散射研究Ge/SiO2/Si纳米系统的压力/张力(英文)

作     者：K.L.Teo 

作者机构：Department of Electrical and Computer Engineering National University of Singapore 

出 版 物：《光散射学报》 (The Journal of Light Scattering)

年 卷 期：2005年第3期

页      面：14-16页

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：SiO Ge/SiO2/Si cm 

摘      要：We report the pressure dependence of Ge nanocrystals embedded in SiO2 film matrix on Si substrate using Raman scattering and finite element analysis. Delamination of SiO2 film from the Si substrate occurs at ～23 kbar due to the large difference between the compressibility of the SiO2 matrix and Si substrate. The observed effect can be understood by the nonhomogeneous distribution of the elastic field in the Ge/SiO2/Si nanosystem. Previous high pressure PL results on the Si/SiO2/Si nanosystem can also be explained by the nonuniform distribution of the elastic field. Although our investigation focuses on the Ge/SiO2/Si nanosystem, our results could provide generally understanding on the elastic properties of different multi-component nanosystems.