Pulsed laser deposited Al-doped ZnO thin films for optical applications

作     者：Gurpreet Kaur Anirban Mitra K.L.Yadav 

作者机构：High Power laser Lab Department of PhysicsIndian Institute of Technology Roorkee 

出 版 物：《Progress in Natural Science:Materials International》 (自然科学进展·国际材料(英文))

年 卷 期：2015年第25卷第1期

页      面：12-21页

核心收录：

学科分类：08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：Department of Science and Technology  India for their financial assistance of INSPIRE fellowship Grant no. 8782-12-44 

主　　题：Al:ZnO thin films Transparent conducting oxide(TCO) Pulsed Laser Deposition(PLD) Optical properties Photoluminescence(PL) 

摘      要：Highly transparent and conducting Al-doped Zn O(Al:Zn O) thin films were grown on glass substrates using pulsed laser deposition *** profound effect of film thickness on the structural, optical and electrical properties of Al:Zn O thin films was observed. The X-ray diffraction depicts c-axis, plane(002) oriented thin films with hexagonal wurtzite crystal structure. Al-doping in Zn O introduces a compressive stress in the films which increase with the film thickness. AFM images reveal the columnar grain formation with low surface roughness. The versatile optical properties of Al:Zn O thin films are important for applications such as transparent electromagnetic interference(EMI) shielding materials and solar cells. The obtained optical band gap(3.2–3.08 e V) was found to be less than pure Zn O(3.37 e V) films. The lowering in the band gap in Al:Zn O thin films could be attributed to band edge bending phenomena. The photoluminescence spectra gives sharp visible emission peaks, enables Al:Zn O thin films for light emitting devices(LEDs) applications. The current–voltage(I–V) measurements show the ohmic behavior of the films with resistivity(ρ) 10-3Ω cm.