Electronic structures and transport properties of BN nanodot superlattices of armchair graphene nanoribbons

作     者：安丽萍 刘念华 

作者机构：Institute for Advanced StudyNanchang University Department of PhysicsYanshan University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2011年第32卷第9期

页      面：6-11页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(No.10832005) 

主　　题：graphene nanoribbon BN nanodot electronic properties transport properties 

摘      要：The electronic and transport properties of embedded boron nitride（BN） nanodot superlattices of armchair graphene nanoribbons are studied by first-principles *** band structure of the graphene superlattice strongly depends on the geometric shape and size of the BN nanodot,as well as the concentration of *** conduction bands and valence bands near the Fermi level are nearly symmetric,which is induced by electron-hole *** B and N atoms in the graphene superlattices with a triangular BN nanodot are exchanged,the valance bands and conduction bands are inverted with respect to the Fermi level due to electron-hole *** addition,the hybridization ofπorbitals from C and redundant B atoms or N atoms leads to a localized band appearing near the Fermi *** results also show a series of resonant peaks appearing in the *** strongly depends on the distance of the two BN nanodots and on the shape of the BN nanodot. Controlling these parameters might allow the modulation of the electronic response of the systems.