Arsenic Detection Using Surface Plasmon Resonance Sensor With Hydrous Ferric Oxide Layer

作     者：Yasmin MUSTAPHA KAMIL Sura Hmoud AL-REKABI Muhammad Hafiz ABU BAKAR Yap Wing FEN Husam Abduldaem MOHAMMED Nor Hafizah MOHAMED HALIP Mohammed Thamer ALRESHEEDI Mohd Adzir MAHDI Yasmin MUSTAPHA KAMIL;Sura Hmoud AL-REKABI;Muhammad Hafiz ABU BAKAR;Yap Wing FEN;Husam Abduldaem MOHAMMED;Nor Hafizah MOHAMED HALIP;Mohammed Thamer ALRESHEEDI;Mohd Adzir MAHDI

作者机构：inLAZER Dynamics Sdn BhdInnoHub UnitPutra Science ParkUniversiti Putra MalaysiaSerdang 43400Malaysia Electrical Engineering DepartmentAl Suwayrah Technical InstituteMiddle Technical UniversityBaghdad 10074Iraq Wireless and Photonic Networks Research CentreFaculty of EngineeringUniversiti Putra MalaysiaSerdang 43400Malaysia Institute of Advanced TechnologyUniversiti Putra MalaysiaSerdang 43400Malaysia Department of PhysicsFaculty of ScienceUniversiti Putra MalaysiaSerdang 43400Malaysia Electronic and Communication Engineering DepartmentCollege of EngineeringUniversity of BaghdadBaghdad 10071Iraq Department of Electrical EngineeringCollege of EngineeringKing Saud UniversityRiyadh 11421Kingdom of Saudi Arabia 

出 版 物：《Photonic Sensors》 (光子传感器（英文版）)

年 卷 期：2022年第12卷第3期

页      面：30-37页

核心收录：

学科分类：080202[工学-机械电子工程] 08[工学] 0802[工学-机械工程] 

基　　金：funded by Ministry of Higher Education Malaysia Fundamental Research Grant Scheme(Grant No.FRGS/2/2014/TK03/UPM/01/1) the King Saud University,Kingdom of Saudi Arabia Researchers Supporting Project(Grant No.RSP-2021/336) 

主　　题：Surface plasmon resonance di-iron trioxide hydrate arsenic heavy metals ion optical sensor 

摘      要：The lethality of inorganic arsenic(As)and the threat it poses have made the development of efficient As detection systems a vital *** research work demonstrates a sensing layer made of hydrous ferric oxide(Fe_(2)H_(2)O_(4))to detect As(Ⅲ)and As(Ⅴ)ions in a surface plasmon resonance *** sensor conceptualizes on the strength of Fe_(2)H_(2)O_(4) to absorb As ions and the interaction of plasmon resonance towards the changes occurring on the sensing *** sensitivity values for As(Ⅲ)and As(Ⅴ)were 1.083°·ppb^(–1) and 0.922°·ppb^(-1),respectively,while the limit of detection for both ions was 0.6 *** findings support the feasibility and potential of the sensor configuration towards paving future advancement in As detection systems.