Novel approach to harmonic control for Class F power amplifier with high power added efficiency

作     者：Jin Boshi Wu Qun Yang Guohui Kim Bumman 

作者机构：School of Electronics and Information Technology Harbin Institute of Technology Harbin 150001 China Department of Electronics and Electrical Engineering Pohang University of Science and Technology Pohang South Korea 790784 

出 版 物：《仪器仪表学报》 (Chinese Journal of Scientific Instrument)

年 卷 期：2007年第28卷第7期

页      面：1176-1179页

核心收录：

学科分类：080902[工学-电路与系统] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：F类功率放大器 功效 谐波控制 电阻 傅里叶级数 

摘      要：This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))*** time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis *** the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage *** experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement *** results show that the maximum PAE of 67% can be achieved at 28 dBm output power level.