Effects of interfacial wettability on arc erosion behavior of Zn_(2)SnO_(4)/Cu electrical contacts

作     者：Wei-Jian Li Zi-Yao Chen Hao Jiang Xiao-Han Sui Cong-Fei Zhao Liang Zhen Wen-Zhu Shao Wei-Jian Li;Zi-Yao Chen;Hao Jiang;Xiao-Han Sui;Cong-Fei Zhao;Liang Zhen;Wen-Zhu Shao

作者机构：School of Materials Science and EngineeringHarbin Institute of TechnologyHarbin 150001China College of Nuclear Equipment and Nuclear EngineeringYantai UniversityYantai 264005China National Key Laboratory of Precision Hot Processing of MetalsHarbin Institute of TechnologyHarbin 150001China 

出 版 物：《Journal of Materials Science & Technology》 (材料科学技术（英文版）)

年 卷 期：2022年第109卷第14期

页      面：64-75页

核心收录：

学科分类：080503[工学-材料加工工程] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：financially supported by the National Natural Science Foundation of China(Nos.51877048 and 11875046) 

主　　题：Zn_(2)SnO_(4)/Cu electrical contacts Arc erosion Wettability DFT calculations Electronic structure 

摘      要：Interface wettability is a vital role in directly impacting the electrical contact characteristics of oxides/Cubased composites under arc *** its influence mechanism,especially at atomic/electronic scales,is significant but challenging for the rational design of oxides/Cu ***,we designed Zn_(2)SnO_(4)/Cu electrical contacts aiming to solve the poor wettability of SnO_(2)/Cu *** was found that Zn_(2)SnO_(4)could remarkably improve the arc resistance of Cu-based electrical contacts,which was benefited by the excellent interface wettability of Zn_(2)SnO_(4)/*** characterization of eroded surface indicated that Zn_(2)SnO_(4)particles distributed uniformly on the contact surface,leading to stable electrical contact ***,SnO_(2)considerably deteriorated the arc resistance of SnO_(2)/Cu composite by agglomerating on the *** effect mechanism of wettability on arc resistance was investigated through density function theory(DFT)*** revealed that strong polar covalent bonds across the Zn_(2)SnO_(4)/Cu interface contributed to improving the interfacial adhesion strength/wettability and thus significantly enhanced the arc *** binary SnO_(2)/Cu interface,ionic bonds resulted in weak interface adhesion,giving rise to deterioration of electrical contact *** work discloses the bonding mechanism of oxide/Cu interfaces and paves an avenue for the rational design of ternary oxide/Cu-based electrical contact materials.