Valley-filling instability and critical magnetic field for interaction-enhanced Zeeman response in doped WSe_(2) monolayers

作     者：Fengyuan Xuan Su Ying Quek 

作者机构：Centre for Advanced 2D MaterialsNational University of Singapore6 Science Drive 2Singapore 117546Singapore Department of PhysicsNational University of Singapore2 Science Drive 3Singapore 117551Singapore NUS Graduate School Integrative Sciences and Engineering ProgrammeNational University of SingaporeSingaporeSingapore Department of Materials Science and EngineeringNational University of SingaporeSingaporeSingapore 

出 版 物：《npj Computational Materials》 (计算材料学（英文）)

年 卷 期：2021年第7卷第1期

页      面：1842-1849页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

基　　金：This work is supported by the NUS Provost’s Office,the Ministry of Education(MOE 2017-T2-2-139) the National Research Foundation(NRF),Singapore,under the NRF medium-sized center program.Calculations were performed on the computational cluster in the Centre for Advanced 2D Materials and the National Supercomputing Centre,Singapore 

主　　题：effect interaction critical 

摘      要：Carrier-doped transition metal dichalcogenide(TMD)monolayers are of great interest in valleytronics due to the large Zeeman response(g-factors)in these spin-valley-locked materials,arising from many-body *** develop an ab initio approach based on many-body perturbation theory to compute the interaction-enhanced g-factors in carrier-doped *** show that the g-factors of doped WSe2 monolayers are enhanced by screened-exchange interactions resulting from magnetic-field-induced changes in band *** interaction-enhanced g-factors g*agree well with *** traditional valleytronic materials such as silicon,the enhancement in g-factor vanishes beyond a critical magnetic field Bc achievable in standard *** identify ranges of g*for which this change in g-factor at Bc leads to a valley-filling instability and Landau level alignment,which is important for the study of quantum phase transitions in doped *** further demonstrate how to tune the g-factors and optimize the valley-polarization for the valley Hall effect.