Effect of nitrogen gas flow and growth temperature on extension of GaN layer on Si

作     者：Jian-Kai Xu Li-Juan Jiang Qian Wang Quan Wang Hong-Ling Xiao Chun Feng Wei Li Xiao-Liang Wang 徐健凯;姜丽娟;王茜;王权;肖红领;冯春;李巍;王晓亮

作者机构：Key Laboratory of Semiconductor Materials ScienceInstitute of SemiconductorsChinese Academy of SciencesBeijing 100083China Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijing 100049China School of MicroelectronicsUniversity of Chinese Academy of SciencesBeijing 100049China Beijing Key Laboratory of Low Dimensional Semiconductor Materials and DevicesBeijing 100083China The State Key Laboratory of Crystal MaterialsShandong UniversityJinan 250100China Institute of Novel SemiconductorsShandong UniversityJinan 250100China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第11期

页      面：604-609页

核心收录：

学科分类：081702[工学-化学工艺] 08[工学] 0817[工学-化学工程与技术] 

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0402900) the National Natural Sciences Foundation of China(Grant No.62074144) 

主　　题：GaN extension MOCVD nitrogen flow growth temperature 

摘      要：The effect of nitrogen flow and growth temperature on extension of GaN on Si substrate has been *** increasing the nitrogen flow whose outlet is located in the center of the MOCVD(metal–organic chemical vapor deposition)gas/particle screening flange and by increasing the growth temperature of HT-AlN and AlGaN buffer layers near the primary flat of the wafer,the GaN layer has extended more adequately on Si *** the meantime,the surface morphology has been greatly *** the AlN and GaN crystal quality uniformity has been improved.X-ray diffraction results showed that the GaN(0002)XRD FWHMs(full width at half maximum)decreased from 579 arcsec~1655 arcsec to around 420 arcsec.