Observation of magnetoresistance in CrI_(3)/graphene van der Waals heterostructures

作     者：Yu-Ting Niu Xiao Lu Zhong-Tai Shi Bo Peng 牛宇婷;鲁晓;石钟太;彭波

作者机构：National Engineering Research Center of Electromagnetic Radiation Control MaterialsSchool of Electronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 611731China Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of EducationUniversity of Electronic Science and Technology of ChinaChengdu 611731China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2021年第30卷第11期

页      面：27-31页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.51872039) Science and Technology Program of Sichuan,China(Grant No.M112018JY0025) 

主　　题：two-dimensional ferromagnetic van der Waals heterostructure magnetoresistance 

摘      要：Two-dimensional ferromagnetic van der Waals(2D vdW)heterostructures have opened new avenues for creating artificial materials with unprecedented electrical and optical functions beyond the reach of isolated 2D atomic layered materials,and for manipulating spin degree of freedom at the limit of few atomic layers,which empower next-generation spintronic and memory ***,to date,the electronic properties of 2D ferromagnetic heterostructures still remain ***,we report an unambiguous magnetoresistance behavior in CrI_(3)/graphene heterostructures,with a maximum magnetoresistance ratio of 2.8%.The magnetoresistance increases with increasing magnetic field,which leads to decreasing carrier densities through Lorentz force,and decreases with the increase of the bias *** work highlights the feasibilities of applying two-dimensional ferromagnetic vdW heterostructures in spintronic and memory devices.